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| PartNumber | SUP85N10-10-E3 | SUP85N10-10 | SUP85N10-10,SUP85N06 |
| Description | MOSFET 100V N-CH 175 DEG.C | MOSFET RECOMMENDED ALT 781-SUP85N10-10-E3 | |
| Manufacturer | Vishay | VISHAY | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 85 A | - | - |
| Rds On Drain Source Resistance | 8.5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 160 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 250 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Tube | - | - |
| Series | SUP | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 25 S | - | - |
| Fall Time | 130 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 90 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 55 ns | - | - |
| Typical Turn On Delay Time | 12 ns | - | - |
| Unit Weight | 0.211644 oz | - | - |