SUP90142E-GE3 vs SUP90220E-GE3 vs SUP90140E-GE3

 
PartNumberSUP90142E-GE3SUP90220E-GE3SUP90140E-GE3
DescriptionMOSFET 200V Vds 20V Vgs TO-220ABMOSFET 200V Vds 20V Vgs TO-220ABMOSFET 200V Vds 20V Vgs TO-220
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3TO-220-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage200 V200 V200 V
Id Continuous Drain Current90 A64 A90 A
Rds On Drain Source Resistance12.6 mOhms18 mOhms13.8 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V2 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge87 nC48 nC96 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation375 W230 W375 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingTube-Tube
Height15.49 mm--
Length10.41 mm--
SeriesSUP-SUP
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width4.7 mm--
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min63 S37 S75 S
Fall Time80 ns38 ns80 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time125 ns35 ns112 ns
Factory Pack Quantity500500500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time27 ns28 ns35 ns
Typical Turn On Delay Time14 ns15 ns13 ns
Unit Weight0.063493 oz0.063493 oz0.063493 oz
Tradename--ThunderFET
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