TISP5150H3BJR-S vs TISP5150H3BJR vs TISP5150H3BJ

 
PartNumberTISP5150H3BJR-STISP5150H3BJRTISP5150H3BJ
DescriptionThyristor Surge Protection Devices (TSPD) Forward Conducting UnidirectionalThyristor Surge Protection Devices (TSPD) Forward Conducting UnidirectionalSilicon Surge Protector, 150V V(BO) Max, 60A, DO-214AA
ManufacturerBournsBournsBourns Inc.
Product CategoryThyristor Surge Protection Devices (TSPD)Thyristor Surge Protection Devices (TSPD)IC Chips
RoHSEN-
Breakover Voltage VBO- 150 V- 150 V-
Breakover Current IBO Max600 mA600 mA-
Non Repetitive On State Current55 A, 60 A55 A, 60 A-
Rated Repetitive Off State Voltage VDRM- 120 V- 120 V-
Off State Leakage Current @ VDRM IDRM- 5 uA- 5 uA-
Holding Current Ih Max600 mA600 mA-
On State Voltage- 3 V- 3 V-
Off State Capacitance CO30 pF to 140 pF30 pF to 140 pF-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 85 C+ 85 C-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseDO-214AA-2DO-214AA-2-
PackagingReelReelTape & Reel (TR)
Current Rating5 A5 A-
SeriesTISP5xxxH3BJTISP5xxxH3BJ-
BrandBournsBourns-
Product TypeTSPDsTSPDs-
Factory Pack Quantity30003000-
SubcategoryThyristorsThyristors-
TradenameTISPTISP-
Unit Weight0.003386 oz0.003386 oz-
Package Case--DO-214AA, SMB
Capacitance--140pF
Number of Elements--1
Voltage Breakover--150V
Voltage Off State--120V
Current Peak Pulse 10 1000μs--100A
Voltage On State--3V
Current Peak Pulse 8 20μs--300A
Current Hold Ih--150mA
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