TK100E10N1,S1X vs TK100E10N1 vs TK100E10N1 100A/100V

 
PartNumberTK100E10N1,S1XTK100E10N1TK100E10N1 100A/100V
DescriptionMOSFET 100V N-Ch PWR FET 8800pF 140nC 207AMOSFET N-CH 100V 100A U-MOS TO220, TU
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current207 A--
Rds On Drain Source Resistance3.4 mOhms--
Vgs Gate Source Voltage10 V--
Qg Gate Charge140 nC--
ConfigurationSingle--
TradenameDTMOSIV--
PackagingReel--
Height15.1 mm--
Length10.16 mm--
SeriesTK100E10N1--
Transistor Type1 N-Channel--
Width4.45 mm--
BrandToshiba--
Product TypeMOSFET--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Unit Weight0.211644 oz--
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