TK39J60W,S1VQ vs TK39J60W vs TK39J60W5

 
PartNumberTK39J60W,S1VQTK39J60WTK39J60W5
DescriptionMOSFET N-Ch 38.8A 270W FET 600V 4100pF 110nC
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-3PN-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current38.8 A--
Rds On Drain Source Resistance65 mOhms--
Vgs Gate Source Voltage10 V--
Qg Gate Charge135 nC--
Pd Power Dissipation270 W--
ConfigurationSingle--
Height20 mm--
Length15.5 mm--
SeriesTK39J60W--
Transistor Type1 N-Channel--
Width4.5 mm--
BrandToshiba--
Product TypeMOSFET--
Factory Pack Quantity25--
SubcategoryMOSFETs--
Unit Weight0.245577 oz--
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