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| PartNumber | TMBT3906,LM | TMBT3906 | TMBT3906 LM T |
| Description | Bipolar Transistors - BJT Transistor for Low Freq. Amplification | ||
| Manufacturer | Toshiba | Toshiba Semiconductor and Storage | - |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single, Pre-Biased | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | - 50 V | - | - |
| Collector Base Voltage VCBO | - 50 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Collector Emitter Saturation Voltage | - 400 mV | - | - |
| Maximum DC Collector Current | - 150 mA | - | - |
| Gain Bandwidth Product fT | 250 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | TMBT3906 | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Brand | Toshiba | - | - |
| Pd Power Dissipation | 1 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000282 oz | - | - |
| Package Case | - | TO-236-3, SC-59, SOT-23-3 | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | SOT-23 | - |
| Power Max | - | 320mW | - |
| Transistor Type | - | PNP | - |
| Current Collector Ic Max | - | 150mA | - |
| Voltage Collector Emitter Breakdown Max | - | 50V | - |
| DC Current Gain hFE Min Ic Vce | - | 100 @ 10mA, 1V | - |
| Vce Saturation Max Ib Ic | - | 400mV @ 5mA, 50mA | - |
| Current Collector Cutoff Max | - | 100nA (ICBO) | - |
| Frequency Transition | - | 250MHz | - |