TPH4R008NH,L1Q vs TPH4R008NH vs TPH4R008NH L1Q(M

 
PartNumberTPH4R008NH,L1QTPH4R008NHTPH4R008NH L1Q(M
DescriptionMOSFET U-MOSVIII-H 80V 100A 59nC MOSFETPOWER, FET
ManufacturerToshibaToshiba Semiconductor and Storage-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOP-Advance-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance3.3 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge59 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation78 W--
ConfigurationSingle--
TradenameUMOSVIII--
PackagingReelDigi-ReelR Alternate Packaging-
Height0.95 mm--
Length5 mm--
SeriesTPH4R008NH--
Transistor Type1 N-Channel--
Width5 mm--
BrandToshiba--
Fall Time12 ns--
Product TypeMOSFET--
Rise Time86 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time52 ns--
Typical Turn On Delay Time25 ns--
Unit Weight0.030018 oz--
Package Case-8-PowerVDFN-
Operating Temperature-150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-8-SOP Advance-
FET Type-MOSFET N-Channel, Metal Oxide-
Power Max-78W-
Drain to Source Voltage Vdss-80V-
Input Capacitance Ciss Vds-5300pF @ 40V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-60A (Tc)-
Rds On Max Id Vgs-4 mOhm @ 30A, 10V-
Vgs th Max Id-4V @ 1mA-
Gate Charge Qg Vgs-59nC @ 10V-
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