TPS1100D vs TPS1100DG4 vs TPS1100DG

 
PartNumberTPS1100DTPS1100DG4TPS1100DG
DescriptionMOSFET MOSFET 10ns RTMOSFET Single P-Ch Enh-Mode MOSFET
ManufacturerTexas InstrumentsTexas Instruments-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOIC-8SOIC-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage15 V15 V-
Id Continuous Drain Current1.6 A1.6 A-
Rds On Drain Source Resistance180 mOhms180 mOhms-
Vgs Gate Source Voltage15 V2 V, - 15 V-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 85 C+ 125 C-
Pd Power Dissipation791 mW791 mW-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Height1.75 mm1.75 mm-
Length4.9 mm4.9 mm-
ProductMOSFET Small SignalMOSFET Small Signal-
SeriesTPS1100TPS1100-
Transistor Type1 P-Channel1 P-Channel-
TypeMOSFETPMOS Switches-
Width3.9 mm3.9 mm-
BrandTexas InstrumentsTexas Instruments-
Forward Transconductance Min2.5 S--
Fall Time10 ns10 ns-
Product TypeMOSFETMOSFET-
Rise Time10 ns10 ns-
Factory Pack Quantity7575-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time13 ns13 ns-
Typical Turn On Delay Time4.5 ns4.5 ns-
Unit Weight0.002677 oz0.002677 oz-
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