PartNumber | TPS1100D | TPS1100DG4 | TPS1100DG |
Description | MOSFET MOSFET 10ns RT | MOSFET Single P-Ch Enh-Mode MOSFET | |
Manufacturer | Texas Instruments | Texas Instruments | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOIC-8 | SOIC-8 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | P-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 15 V | 15 V | - |
Id Continuous Drain Current | 1.6 A | 1.6 A | - |
Rds On Drain Source Resistance | 180 mOhms | 180 mOhms | - |
Vgs Gate Source Voltage | 15 V | 2 V, - 15 V | - |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Maximum Operating Temperature | + 85 C | + 125 C | - |
Pd Power Dissipation | 791 mW | 791 mW | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Tube | Tube | - |
Height | 1.75 mm | 1.75 mm | - |
Length | 4.9 mm | 4.9 mm | - |
Product | MOSFET Small Signal | MOSFET Small Signal | - |
Series | TPS1100 | TPS1100 | - |
Transistor Type | 1 P-Channel | 1 P-Channel | - |
Type | MOSFET | PMOS Switches | - |
Width | 3.9 mm | 3.9 mm | - |
Brand | Texas Instruments | Texas Instruments | - |
Forward Transconductance Min | 2.5 S | - | - |
Fall Time | 10 ns | 10 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 10 ns | 10 ns | - |
Factory Pack Quantity | 75 | 75 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 13 ns | 13 ns | - |
Typical Turn On Delay Time | 4.5 ns | 4.5 ns | - |
Unit Weight | 0.002677 oz | 0.002677 oz | - |