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| PartNumber | TSC5302DCH C5G | TSC5302DCH | TSC5302DCP |
| Description | Bipolar Transistors - BJT High voltage NPN Transistor with diode | Bipolar Transistors - BJT High Vltg NPN Transistor w/ diode | Bipolar Transistors - BJT High Vltg NPN Transistor w/ diode |
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | TSC |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | IC Chips |
| RoHS | Y | Y | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-251-3 | - | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 400 V | - | - |
| Collector Base Voltage VCBO | 700 V | - | - |
| Emitter Base Voltage VEBO | 10 V | - | - |
| Collector Emitter Saturation Voltage | 1.1 V | - | - |
| Maximum DC Collector Current | 4 A | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 30 | - | - |
| Packaging | Reel | Reel | - |
| Brand | Taiwan Semiconductor | Taiwan Semiconductor | - |
| Continuous Collector Current | 2 A | - | - |
| DC Collector/Base Gain hfe Min | 5 | - | - |
| Pd Power Dissipation | 1.5 W | - | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1875 | 1875 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.011993 oz | - | - |