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TSC966CW RPG vs TSC966CT A3 vs TSC966CT A3G

 
PartNumberTSC966CW RPGTSC966CT A3TSC966CT A3G
DescriptionBipolar Transistors - BJT NPN Silicon Planar Med Power TransistorBipolar Transistors - BJT NPN Silicon Planar Med Power TransistorBipolar Transistors - BJT NPN Silicon Planar Medium Power Transistor
ManufacturerTaiwan SemiconductorTaiwan SemiconductorTaiwan Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYYY
Package / CaseSOT-223-4-TO-92-3
PackagingReelAmmo PackReel
BrandTaiwan SemiconductorTaiwan SemiconductorTaiwan Semiconductor
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity250020002000
SubcategoryTransistorsTransistorsTransistors
Transistor Polarity-NPNNPN
Technology--Si
Mounting Style--Through Hole
Configuration--Single
Collector Emitter Voltage VCEO Max--400 V
Collector Base Voltage VCBO--600 V
Emitter Base Voltage VEBO--7 V
Collector Emitter Saturation Voltage--0.5 V
Maximum DC Collector Current--300 mA
Gain Bandwidth Product fT--50 MHz
Minimum Operating Temperature--- 55 C
Maximum Operating Temperature--+ 150 C
DC Current Gain hFE Max--300
Continuous Collector Current--0.3 A
DC Collector/Base Gain hfe Min--90
Pd Power Dissipation--900 mW
Unit Weight--0.007654 oz
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