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| PartNumber | TSM10N80CI C0G | TSM10N80CZ C0 | TSM10N80CI |
| Description | MOSFET 800V 10A N Channel Power Mosfet | MOSFET 800V 10A N Channel Mosfet | |
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | ITO-220-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 800 V | - | - |
| Id Continuous Drain Current | 9.5 A | - | - |
| Rds On Drain Source Resistance | 900 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 53 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | Tube | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Taiwan Semiconductor | - | - |
| Forward Transconductance Min | 6.3 S | - | - |
| Fall Time | 72 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 62 ns | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 256 ns | - | - |
| Typical Turn On Delay Time | 63 ns | - | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | - |
| Package Case | - | TO-220-3 | - |
| Id Continuous Drain Current | - | 9.5 A | - |
| Vds Drain Source Breakdown Voltage | - | 800 V | - |
| Rds On Drain Source Resistance | - | 1.05 Ohms | - |