TSM2N100CP ROG vs TSM2N100CH C5G vs TSM2N60

 
PartNumberTSM2N100CP ROGTSM2N100CH C5GTSM2N60
DescriptionMOSFET Power MOSFET, N-CHAN 1000V 1.85A 8.5 OhmsMOSFET 1000V, 1.85A, Single N-Channel Power MOSFET
ManufacturerTaiwan SemiconductorTaiwan Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTThrough Hole-
Package / CaseTO-252-3TO-251-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage1 kV1 kV-
Id Continuous Drain Current1.85 A1.85 A-
Rds On Drain Source Resistance8.5 Ohms6 Ohms-
Vgs th Gate Source Threshold Voltage3.5 V3.5 V-
Vgs Gate Source Voltage30 V10 V-
Qg Gate Charge17 nC17 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation77 W77 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelTube-
ProductRectifiers--
BrandTaiwan SemiconductorTaiwan Semiconductor-
Fall Time44 ns44 ns-
Product TypeMOSFETMOSFET-
Rise Time14 ns14 ns-
Factory Pack Quantity25003750-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time78 ns78 ns-
Typical Turn On Delay Time31 ns31 ns-
Transistor Type-1 N-Channel-
Unit Weight-0.011993 oz-
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