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| PartNumber | TSM6N60CH C5 | TSM6N60CH C5G | TSM6N60CP |
| Description | MOSFET 500V N Channl Mosfet | N-Ch 600V 6A 89W 1,25R TO251 | |
| Manufacturer | Taiwan Semiconductor | - | Taiwan Semiconductor |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | SMD/SMT |
| Package / Case | TO-251-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 6 A | - | - |
| Rds On Drain Source Resistance | 1.1 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 20.7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 89 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | Reel |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | Taiwan Semiconductor | - | - |
| Fall Time | 6.2 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7.6 ns | - | - |
| Factory Pack Quantity | 1875 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 57 ns | - | - |
| Typical Turn On Delay Time | 21 ns | - | - |
| Unit Weight | 0.012102 oz | - | 0.139332 oz |
| Package Case | - | - | TO-252-3 |
| Id Continuous Drain Current | - | - | 6 A |
| Vds Drain Source Breakdown Voltage | - | - | 600 V |
| Rds On Drain Source Resistance | - | - | 1.25 Ohms |