TSM8N70CI C0 vs TSM8N70CI C0G vs TSM8N70CI

 
PartNumberTSM8N70CI C0TSM8N70CI C0GTSM8N70CI
DescriptionMOSFET 800V 7A N Channel Power MosfetMOSFET 800V 7Amp N channel Power Mosfet
ManufacturerTaiwan SemiconductorTaiwan Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3ITO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage700 V700 V-
Id Continuous Drain Current8 A8 A-
Rds On Drain Source Resistance750 mOhms750 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage10 V10 V-
Qg Gate Charge32 nC32 nC-
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation40 W40 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeReel-
Transistor Type1 N-Channel1 N-Channel-
BrandTaiwan SemiconductorTaiwan Semiconductor-
Forward Transconductance Min11 S--
Fall Time77 ns77 ns-
Product TypeMOSFETMOSFET-
Rise Time69 ns69 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time144 ns144 ns-
Typical Turn On Delay Time23 ns23 ns-
Unit Weight0.211644 oz0.059966 oz-
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