TSM8N80CI C0G vs TSM8N80CZ C0 vs TSM8N80CI

 
PartNumberTSM8N80CI C0GTSM8N80CZ C0TSM8N80CI
DescriptionMOSFET 800V 8A N Channel Power MosfetMOSFET 800V 8A N Channel Mosfet
ManufacturerTaiwan SemiconductorTaiwan Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseITO-220-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage800 V800 V-
Id Continuous Drain Current8 A8 A-
Rds On Drain Source Resistance1.1 Ohms1.1 Ohms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage10 V10 V-
Qg Gate Charge41 nC41 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation40.3 W250 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Transistor Type1 N-Channel1 N-Channel-
BrandTaiwan SemiconductorTaiwan Semiconductor-
Forward Transconductance Min7 S7 S-
Fall Time37 ns37 ns-
Product TypeMOSFETMOSFET-
Rise Time30 ns30 ns-
Factory Pack Quantity20001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time37 ns37 ns-
Typical Turn On Delay Time133 ns133 ns-
Unit Weight0.211644 oz0.211644 oz-
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