UMB4NTN vs UMB4 N vs UMB4N TN/B4

 
PartNumberUMB4NTNUMB4 NUMB4N TN/B4
DescriptionBipolar Transistors - Pre-Biased DUAL PNP 50V 100MA
ManufacturerROHM SemiconductorROHM-
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Arrays, Pre-Biased-
RoHSY--
ConfigurationDual--
Transistor PolarityPNP--
Typical Input Resistor10 kOhms--
Mounting StyleSMD/SMT--
Package / CaseUMT-6--
DC Collector/Base Gain hfe Min100--
Collector Emitter Voltage VCEO Max- 50 V--
Continuous Collector Current- 100 mA--
Peak DC Collector Current100 mA--
Pd Power Dissipation150 mW--
Maximum Operating Temperature+ 150 C--
SeriesUMB4N--
PackagingReel--
Emitter Base Voltage VEBO- 5 V--
Height0.9 mm--
Length2 mm--
Width1.25 mm--
BrandROHM Semiconductor--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesUMB4N--
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