UMD6NTR vs UMD6N vs UMD6N(D6)

 
PartNumberUMD6NTRUMD6NUMD6N(D6)
DescriptionBipolar Transistors - Pre-Biased NPN/PNP 50V 100MA
ManufacturerROHM Semiconductor--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationDual--
Transistor PolarityNPN, PNP--
Typical Input Resistor4.7 kOhms--
Mounting StyleSMD/SMT--
Package / CaseTUMT-6--
DC Collector/Base Gain hfe Min100--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA--
Peak DC Collector Current100 mA--
Pd Power Dissipation150 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesUMD6N--
PackagingReel--
DC Current Gain hFE Max600--
Emitter Base Voltage VEBO5 V--
Height0.9 mm--
Length2 mm--
Width1.25 mm--
BrandROHM Semiconductor--
Number of Channels2 Channel--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesUMD6N--
Unit Weight0.001235 oz--
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