US6T4TR vs US6T4 vs US6T5

 
PartNumberUS6T4TRUS6T4US6T5
DescriptionBipolar Transistors - BJT BIPOLAR PNP
ManufacturerROHM SemiconductorROHMROHM Semiconductor
Product CategoryBipolar Transistors - BJTTransistors (BJT) - SingleTransistors - Bipolar (BJT) - RF
RoHSY--
Mounting StyleSMD/SMT-SMD/SMT
Transistor PolarityPNP-PNP
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max12 V--
Collector Base Voltage VCBO15 V--
Emitter Base Voltage VEBO6 V--
Maximum DC Collector Current3 A-2 A
Gain Bandwidth Product fT280 MHz-280 MHz
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesUS6T4-US6T5
DC Current Gain hFE Max270 at 500 mA, 2 V-270 at 200 mA at 2 V
Height0.77 mm--
Length2 mm--
PackagingReel-Reel
Width1.7 mm--
BrandROHM Semiconductor--
DC Collector/Base Gain hfe Min270--
Pd Power Dissipation1000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesUS6T4--
Package Case--UMT-6
Pd Power Dissipation--1000 mW
Collector Emitter Voltage VCEO Max--30 V
Collector Base Voltage VCBO--30 V
Emitter Base Voltage VEBO--6 V
DC Collector Base Gain hfe Min--270
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