VP0550N3-G vs VP0550N3-G P003 vs VP0550N3-G P002

 
PartNumberVP0550N3-GVP0550N3-G P003VP0550N3-G P002
DescriptionMOSFET 500V 125OhmMOSFET N-CH Enhancmnt Mode MOSFETRF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
ManufacturerMicrochipMicrochipMicrochip Technology
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-92-3TO-92-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelP-ChannelP-Channel
Vds Drain Source Breakdown Voltage500 V500 V-
Id Continuous Drain Current54 mA54 mA-
Rds On Drain Source Resistance125 Ohms85 Ohms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation1 W1 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingBulkReelReel
Height5.33 mm5.33 mm-
Length5.21 mm5.21 mm-
Transistor Type1 P-Channel1 P-Channel1 P-Channel
TypeFET--
Width4.19 mm4.19 mm-
BrandMicrochip TechnologyMicrochip Technology-
Fall Time5 ns10 ns10 ns
Product TypeMOSFETMOSFET-
Rise Time8 ns15 ns15 ns
Factory Pack Quantity10002000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time10 ns10 ns10 ns
Typical Turn On Delay Time10 ns10 ns10 ns
Unit Weight0.016000 oz0.016000 oz0.016000 oz
Product-MOSFET Small Signal-
Package Case--TO-92-3
Pd Power Dissipation--1 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--- 54 mA
Vds Drain Source Breakdown Voltage--- 500 V
Rds On Drain Source Resistance--85 Ohms
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