VT6Z1T2R vs VT6Z2T2R vs VT6Z2


PartNumber	VT6Z1T2R	VT6Z2T2R	VT6Z2
Description	Bipolar Transistors - BJT NPN/PNP	Bipolar Transistors - BJT TRANS GP BJT NPN PNP 50V 0.1A 6PIN
Manufacturer	ROHM Semiconductor	ROHM Semiconductor	ROHM
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Transistors (BJT) - Arrays
RoHS	Y	Y	-
Technology	Si	Si	Si
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	VMT-6	VMT-6	-
Transistor Polarity	NPN, PNP	NPN, PNP	NPN PNP
Configuration	Dual	Dual	Dual
Collector Emitter Voltage VCEO Max	20 V	50 V	-
Collector Base Voltage VCBO	20 V	50 V	-
Emitter Base Voltage VEBO	5 V	5 V	-
Collector Emitter Saturation Voltage	120 mV	0.1 V, - 0.15 V	0.1 V - 0.15 V
Maximum DC Collector Current	400 mA, - 400 mA	200 mA	200 mA
Gain Bandwidth Product fT	350 MHz, 400 MHz	350 MHz, 300 MHz	350 MHz 300 MHz
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Series	VT6Z1	VT6Z2	VT6Z2
DC Current Gain hFE Max	560	560 at - 1 mA, - 6 V	560 at - 1 mA at - 6 V
Packaging	Reel	Reel	Tape & Reel (TR)
Brand	ROHM Semiconductor	ROHM Semiconductor	-
Continuous Collector Current	200 mA	-	-
DC Collector/Base Gain hfe Min	120	120	-
Pd Power Dissipation	150 mW	150 mW	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	8000	8000	-
Subcategory	Transistors	Transistors	-
Part # Aliases	VT6Z1	VT6Z2	-
Minimum Operating Temperature	-	- 55 C	- 55 C
Package Case	-	-	6-SMD
Mounting Type	-	-	Surface Mount
Supplier Device Package	-	-	VMT6
Power Max	-	-	150mW
Transistor Type	-	-	NPN, PNP
Current Collector Ic Max	-	-	100mA
Voltage Collector Emitter Breakdown Max	-	-	50V
DC Current Gain hFE Min Ic Vce	-	-	120 @ 1mA, 6V
Vce Saturation Max Ib Ic	-	-	300mV @ 5mA, 50mA
Current Collector Cutoff Max	-	-	100nA (ICBO)
Frequency Transition	-	-	350MHz
Pd Power Dissipation	-	-	150 mW
Collector Emitter Voltage VCEO Max	-	-	50 V
Collector Base Voltage VCBO	-	-	50 V
Emitter Base Voltage VEBO	-	-	5 V
DC Collector Base Gain hfe Min	-	-	120 at - 1 mA at - 6 V