 | |  | |
| PartNumber | ZXMS6005DGTA | ZXMS6005DGQ-13 | ZXMS6005DGQTA |
| Description | MOSFET 60V N-Ch Intellifet 200mohm 2A 490mJ | MOSFET Low Side IntelliFET | 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET™ MOSFET |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-223-3 | SOT-223-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 2 A | 2 A | - |
| Rds On Drain Source Resistance | 200 mOhms | 200 mOhms | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 125 C | + 125 C | - |
| Pd Power Dissipation | 3 W | 3 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | IntelliFET | - | - |
| Packaging | Reel | Reel | - |
| Product | MOSFET Small Signal | - | - |
| Series | ZXMS600 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Fall Time | 19 us | 19 us | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 14 us | 14 us | - |
| Factory Pack Quantity | 1000 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 34 us | 34 us | - |
| Typical Turn On Delay Time | 6 us | 6 us | - |
| Unit Weight | 0.003951 oz | - | - |
| Vgs th Gate Source Threshold Voltage | - | 0.7 V | - |
| Qualification | - | AEC-Q101 | - |