ZXT10P20DE6TA vs ZXT10P20DE6QTA vs ZXT10P20DE6

 
PartNumberZXT10P20DE6TAZXT10P20DE6QTAZXT10P20DE6
DescriptionBipolar Transistors - BJT 20V PNP SuperSOT4Bipolar Transistors - BJT Pwr Low Sat Transistor
ManufacturerDiodes IncorporatedDiodes IncorporatedZ
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-6SOT-26-6-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 20 V- 20 V-
Collector Base Voltage VCBO- 20 V- 20 V-
Emitter Base Voltage VEBO5 V- 7 V-
Collector Emitter Saturation Voltage- 240 mV- 240 mV-
Maximum DC Collector Current2.5 A- 2.5 A-
Gain Bandwidth Product fT180 MHz180 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesZXT10--
DC Current Gain hFE Max300 at 10 mA, 2 V--
Height1.3 mm--
Length3.1 mm--
PackagingReelReel-
Width1.8 mm--
BrandDiodes IncorporatedDiodes Incorporated-
Continuous Collector Current- 2.5 A- 2.5 A-
DC Collector/Base Gain hfe Min300 at 10 mA, 2 V, 300 at 100 mA, 2 V, 150 at 2 A, 2 V, 15 at 6 A, 2 V300-
Pd Power Dissipation1.1 W8.8 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.000229 oz--
Technology-Si-
Top