ZXTN25050DFHTA vs ZXTN25050DFH vs ZXTN25050DFHTR

 
PartNumberZXTN25050DFHTAZXTN25050DFHZXTN25050DFHTR
DescriptionBipolar Transistors - BJT NPN 50V HIGH GAINTRANSISTOR, NPN, 50V, 4A, 1.25W, SOT-23, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:50V, Transition Frequency ft:200MHz, Power Dissipation Pd:1.25W, DC Collector Current:4A, DC
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max50 V--
Collector Base Voltage VCBO150 V--
Emitter Base Voltage VEBO7 V--
Maximum DC Collector Current10 A--
Gain Bandwidth Product fT200 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesZXTN250--
DC Current Gain hFE Max300 at 10 mA, 2 V--
Height1 mm--
Length3.05 mm--
PackagingReel--
Width1.4 mm--
BrandDiodes Incorporated--
Continuous Collector Current4 A--
DC Collector/Base Gain hfe Min300--
Pd Power Dissipation1.25 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
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