Transphorm’s latest Gen III GaN FET offers high-reliability, high-efficiency, high-voltage power conversion in an easy-to-drive automotive-qualified device.
Datum: 2019-04-03
Transphorm's TP65H050WS and TP65H035WS Gen III GaN FETs feature increased noise immunity and increased gate reliability resulting in quiet switching.
Datum: 2018-11-15
Transphorm's TP65H035WS cascode GaN FET offers superior reliability, performance, and improved efficiency over silicon.
Datum: 2018-08-08
Transphorm's 4 kW totem-pole power factor correction (PFC) GaN evaluation board is ideal for data center and broad industrial power supply applications.
Datum: 2017-12-27
Transphorm's 2.5 kW bridgeless totem-pole power factor correction (PFC) GaN evaluation platform features the TPH3212PS 650 V 72 mΩ GaN FET.
Datum: 2017-12-27
The TDHBG2500P100 half-bridge evaluation board provides the elements of a simple buck or boost converter for basic study of switching characteristics and efficiency achievable with Transphorm’s 65
Datum: 2017-01-30