1214-30

1214-30 vs 1214-300 vs 1214-300M

 
PartNumber1214-301214-3001214-300M
DescriptionRF Bipolar Transistors L-Band/Bipolar Radar TransistorRF Bipolar Transistors L-Band/Bipolar Radar TransistorRF Bipolar Transistors Bipolar/LDMOS Transistor
ManufacturerMicrochipMicrochipMicrochip
Product CategoryRF Bipolar TransistorsRF Bipolar TransistorsRF Bipolar Transistors
RoHSYNN
Transistor TypeBipolar--
TechnologySiSiSi
Transistor PolarityNPN--
DC Collector/Base Gain hfe Min20--
Collector Emitter Voltage VCEO Max50 V--
Emitter Base Voltage VEBO3.5 V--
Continuous Collector Current4 A--
Maximum Operating Temperature+ 200 C--
ConfigurationSingle--
Mounting StyleSMD/SMT--
Package / Case55AW-1--
Operating Frequency1.2 GHz to 1.4 GHz--
Output Power30 W--
BrandMicrochip / MicrosemiMicrochip / MicrosemiMicrochip / Microsemi
Maximum DC Collector Current4 A--
Pd Power Dissipation88 W--
Product TypeRF Bipolar TransistorsRF Bipolar TransistorsRF Bipolar Transistors
Factory Pack Quantity111
SubcategoryTransistorsTransistorsTransistors
Hersteller Teil # Beschreibung RFQ
Microchip / Microsemi
Microchip / Microsemi
1214-30 RF Bipolar Transistors L-Band/Bipolar Radar Transistor
1214-300 RF Bipolar Transistors L-Band/Bipolar Radar Transistor
1214-300M RF Bipolar Transistors Bipolar/LDMOS Transistor
1214-30 RF Bipolar Transistors L-Band/Bipolar Radar Transisto
1214-300 RF Bipolar Transistors L-Band/Bipolar Radar Transisto
1214-300M RF Bipolar Transistors Bipolar/LDMOS Transisto
1214-300N Neu und Original
1214-300NS Neu und Original
1214-300V RF POWER TRANSISTOR
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