2DB16 stock, 2DB16, 2DB1697-13


PartNumber	2DB1694-7	2DB1689-7	2DB1694-7-F
Description	Bipolar Transistors - BJT LOW VSAT PNP SMT 3K	Bipolar Transistors - BJT LOW VSAT PNP SMT 3K
Manufacturer	Diodes Incorporated	Diodes Incorporated	-
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	-
RoHS	Y	Y	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	SOT-323-3	SOT-323-3	-
Transistor Polarity	PNP	PNP	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	- 30 V	- 12 V	-
Collector Base Voltage VCBO	- 30 V	- 15 V	-
Emitter Base Voltage VEBO	- 6 V	- 6 V	-
Collector Emitter Saturation Voltage	- 380 mV	-	-
Maximum DC Collector Current	- 2 A	- 3 A	-
Gain Bandwidth Product fT	300 MHz	300 MHz	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	2DB16	2DB16	-
DC Current Gain hFE Max	270 at 100 mA, 2 V	270 at 200 mA, 2 V	-
Height	1 mm	1 mm	-
Length	2.15 mm	2.15 mm	-
Packaging	Reel	Reel	-
Width	1.3 mm	1.3 mm	-
Brand	Diodes Incorporated	Diodes Incorporated	-
DC Collector/Base Gain hfe Min	270 at 100 mA, 2 V	270 at 200 mA, 2 V	-
Pd Power Dissipation	500 mW	500 mW	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	3000	3000	-
Subcategory	Transistors	Transistors	-
Unit Weight	0.000176 oz	0.000176 oz	-

Search Part Number : "2DB16", Match & Start with "2DB16" - Total : 8

Hersteller	Teil #	Beschreibung
Diodes Incorporated	2DB1697-13	Bipolar Transistors - BJT LO VSAT PNP SMT 2.5K
	2DB1694-7	Bipolar Transistors - BJT LOW VSAT PNP SMT 3K
	2DB1689-7	Bipolar Transistors - BJT LOW VSAT PNP SMT 3K
	2DB1689-7	Bipolar Transistors - BJT LOW VSAT PNP SMT 3K
	2DB1697-13	Bipolar Transistors - BJT LO VSAT PNP SMT 2.5K
	2DB1694-7	Bipolar Transistors - BJT LOW VSAT PNP SMT 3K
	2DB1694-7-F	Neu und Original
	2DB1697	Neu und Original

2DB16