 |  | | |
| PartNumber | 2N3499L | 2N3499L/TR | 2N3499 |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT BJTs |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | N | N | N |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-39-3 | TO-5-3 | TO-39-3 |
| Packaging | Tray | Reel | Foil Bag |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 100 | 1 |
| Subcategory | Transistors | Transistors | Transistors |
| Technology | - | Si | Si |
| Transistor Polarity | - | NPN | NPN |
| Configuration | - | Single | Single |
| Collector Emitter Voltage VCEO Max | - | 100 V | 100 V |
| Collector Base Voltage VCBO | - | 100 V | 100 V |
| Emitter Base Voltage VEBO | - | 6 V | 6 V |
| Collector Emitter Saturation Voltage | - | 0.6 V | 200 mV |
| Maximum DC Collector Current | - | 500 mA | 500 mA |
| Minimum Operating Temperature | - | - 65 C | - 65 C |
| Maximum Operating Temperature | - | + 200 C | + 200 C |
| DC Current Gain hFE Max | - | 300 at 150 mA, 10 V | - |
| DC Collector/Base Gain hfe Min | - | 20 at 500 mA, 10 V | - |
| Pd Power Dissipation | - | 1 W | 1 W |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Microchip / Microsemi |
2N3499L | Bipolar Transistors - BJT Small-Signal BJT | |
| 2N3499L/TR | Bipolar Transistors - BJT | ||
| 2N3499 | Bipolar Transistors - BJT BJTs | ||
| 2N3499 | TRANS NPN 100V 0.5A TO-39 |