 | |  | |
| PartNumber | 2N3507 | 2N3507AU4 | 2N3507AL |
| Description | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT Power BJT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | N | - | N |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | SMD/SMT | Through Hole |
| Package / Case | TO-39-3 | TO-39-3 | TO-5-3 |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 50 V | 50 V | - |
| Collector Base Voltage VCBO | 80 V | 80 V | - |
| Emitter Base Voltage VEBO | 5 V | 5 V | - |
| Collector Emitter Saturation Voltage | 500 mV | 1.5 V | - |
| Maximum DC Collector Current | 3 A | 3 A | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 200 C | + 200 C | - |
| DC Current Gain hFE Max | 175 at 500 mA, 1 V | 175 | - |
| Packaging | Bulk | Tray | Foil Bag |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| DC Collector/Base Gain hfe Min | 35 at 500 mA, 1 V | 35 | - |
| Pd Power Dissipation | 1 W | 1 W | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | Transistors | Transistors | Transistors |
| Continuous Collector Current | - | 3 A | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Microchip / Microsemi |
2N3507 | Bipolar Transistors - BJT Power BJT | |
| 2N3507U4 | Bipolar Transistors - BJT Power BJT | ||
| 2N3507AU4 | Bipolar Transistors - BJT Power BJT | ||
| 2N3507L | Bipolar Transistors - BJT Power BJT | ||
| 2N3507AL | Bipolar Transistors - BJT Power BJT | ||
| 2N3507 | Trans GP BJT NPN 50V 3A 3-Pin TO-39 |