2N3583

2N3583 vs 2N3583JANTX vs 2N3583JANTXV

 
PartNumber2N35832N3583JANTX2N3583JANTXV
DescriptionBipolar Transistors - BJT NPN High PowerTrans GP BJT NPN 250V 1A 2-Pin TO-66 - Trays (Alt: JANTX2N3583)Trans GP BJT NPN 250V 1A 2-Pin TO-66 - Trays (Alt: JANTXV2N3583)
ManufacturerCentral Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-66-2--
Transistor PolarityNPN--
Collector Emitter Voltage VCEO Max175 V--
Collector Base Voltage VCBO250 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage5 V--
Maximum DC Collector Current1 A--
Gain Bandwidth Product fT10 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 200 C--
Series2N3583--
PackagingTube--
BrandCentral Semiconductor--
Continuous Collector Current1 A--
Pd Power Dissipation35 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity30--
SubcategoryTransistors--
Part # Aliases2N3583 PBFREE--
Unit Weight0.206000 oz--
Hersteller Teil # Beschreibung RFQ
Central Semiconductor
Central Semiconductor
2N3583 Bipolar Transistors - BJT NPN High Power
Central Semiconductor
Central Semiconductor
2N3583 Bipolar Transistors - BJT NPN High Powe
2N3583JANTX Trans GP BJT NPN 250V 1A 2-Pin TO-66 - Trays (Alt: JANTX2N3583)
2N3583JANTXV Trans GP BJT NPN 250V 1A 2-Pin TO-66 - Trays (Alt: JANTXV2N3583)
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