PartNumber | 2N3635L | 2N3635 | 2N3635L/TR |
Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT PNP Ampl/Switch | Bipolar Transistors - BJT |
Manufacturer | Microchip | Central Semiconductor | Microchip |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | N | Y | N |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-39-3 | TO-39-3 | TO-5-3 |
Packaging | Tray | Bulk | Reel |
Brand | Microchip / Microsemi | Central Semiconductor | Microchip / Microsemi |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1 | 500 | 100 |
Subcategory | Transistors | Transistors | Transistors |
Transistor Polarity | - | PNP | PNP |
Configuration | - | Single | Single |
Collector Emitter Voltage VCEO Max | - | 140 V | 80 V |
Collector Base Voltage VCBO | - | 140 V | 140 V |
Emitter Base Voltage VEBO | - | 5 V | 5 V |
Collector Emitter Saturation Voltage | - | 0.5 V | 0.6 V |
Maximum DC Collector Current | - | 1 A | 1 A |
Gain Bandwidth Product fT | - | 200 MHz | - |
Minimum Operating Temperature | - | - 65 C | - 65 C |
Maximum Operating Temperature | - | + 150 C | + 200 C |
Series | - | 2N3635 | - |
Height | - | 6.6 mm | - |
Length | - | 9.4 mm | - |
Width | - | 9.4 mm | - |
DC Collector/Base Gain hfe Min | - | 50 | 55 at 100 uA, 10 V |
Pd Power Dissipation | - | 1000 mW | 1 W |
Part # Aliases | - | 2N3635 BK | - |
Technology | - | - | Si |
DC Current Gain hFE Max | - | - | 300 at 50 mA, 10 V |