PartNumber | 2N3636 | 2N3636L | 2N3636UB |
Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT Small-Signal BJT |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | N | N | N |
Technology | Si | - | - |
Mounting Style | Through Hole | Through Hole | SMD/SMT |
Package / Case | TO-39-3 | TO-39-3 | SMD-3 |
Transistor Polarity | PNP | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 175 V | - | - |
Collector Base Voltage VCBO | 175 V | - | - |
Emitter Base Voltage VEBO | 5 V | - | - |
Collector Emitter Saturation Voltage | 300 mV | - | - |
Maximum DC Collector Current | 1 A | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 200 C | - | - |
DC Current Gain hFE Max | 150 at 50 mA, 10 VDC | - | - |
Packaging | Foil Bag | Tray | Waffle |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
DC Collector/Base Gain hfe Min | 50 at 50 mA, 10 VDC | - | - |
Pd Power Dissipation | 1 W | - | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | Transistors | Transistors | Transistors |