2N3637 stock, 2N3637, 2N3637


PartNumber	2N3637	2N3637L	2N3637/TR
Description	Bipolar Transistors - BJT Small-Signal BJT	Bipolar Transistors - BJT Small-Signal BJT	Bipolar Transistors - BJT
Manufacturer	Microchip	Microchip	Microchip
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT
RoHS	N	N	N
Technology	Si	-	Si
Mounting Style	Through Hole	Through Hole	Through Hole
Package / Case	TO-39-3	TO-39-3	TO-205AD-3
Transistor Polarity	PNP	-	PNP
Configuration	Single	-	Single
Collector Emitter Voltage VCEO Max	175 V	-	175 V
Collector Base Voltage VCBO	175 V	-	175 V
Emitter Base Voltage VEBO	5 V	-	5 V
Collector Emitter Saturation Voltage	300 mV	-	0.3 V
Maximum DC Collector Current	1 A	-	1 A
Minimum Operating Temperature	- 65 C	-	- 65 C
Maximum Operating Temperature	+ 200 C	-	+ 200 C
DC Current Gain hFE Max	150 at 50 mA, 10 VDC	-	300 at - 50 mA, - 10 V
Packaging	Bulk	Tray	Reel
Brand	Microchip / Microsemi	Microchip / Microsemi	Microchip / Microsemi
DC Collector/Base Gain hfe Min	50 at 50 mA, 10 VDC	-	55 at 100 uA, 10 V
Pd Power Dissipation	1 W	-	5 W
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors
Factory Pack Quantity	1	1	100
Subcategory	Transistors	Transistors	Transistors

Search Part Number : "2N3637", Match & Start with "2N3637" - Total : 16

Hersteller	Teil #	Beschreibung
Microchip / Microsemi	2N3637	Bipolar Transistors - BJT Small-Signal BJT
	2N3637UB	Bipolar Transistors - BJT Small-Signal BJT
	2N3637L	Bipolar Transistors - BJT Small-Signal BJT
	2N3637L/TR	Bipolar Transistors - BJT
	2N3637/TR	Bipolar Transistors - BJT
	2N3637UB/TR	Bipolar Transistors - BJT
	2N3637	Trans GP BJT PNP 175V 1A 3-Pin TO-39
	2N3637UB	Trans GP BJT PNP 140V 1A 3-Pin UB
	2N3637 JANTX	Neu und Original
	2N3637(S)	Neu und Original
	2N3637AJANS	Neu und Original
	2N3637JANS	Neu und Original
	2N3637JANTX	2N3637JANTX - Bulk (Alt: 2N3637JANTX)
	2N3637JANTXV	Neu und Original
	2N3637JANTXV.	Neu und Original
	2N3637S	Neu und Original

2N3637