PartNumber | 2N3740 | 2N3740A | 2N3740A PBFREE |
Description | Bipolar Transistors - BJT Leaded Power Transistor | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT 60Vcbo 60Vceo 7.0Vebo 4.0A 25W |
Manufacturer | Central Semiconductor | Microchip | Central Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | N | Y |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-66-2 | TO-66-2 | TO-66-2 |
Transistor Polarity | PNP | PNP | PNP |
Collector Emitter Voltage VCEO Max | 60 V | 60 V | 60 V |
Collector Base Voltage VCBO | 60 V | 60 V | 60 V |
Emitter Base Voltage VEBO | 7 V | 7 V | 7 V |
Collector Emitter Saturation Voltage | 600 mV | 600 V | 0.6 V |
Maximum DC Collector Current | 10 A | 10 A | - |
Gain Bandwidth Product fT | 4 MHz | 3 MHz | 4 MHz |
Maximum Operating Temperature | + 200 C | + 200 C | + 200 C |
Series | 2N3740 | - | 2N37 |
Packaging | Tube | Tray | Tube |
Brand | Central Semiconductor | Microchip / Microsemi | Central Semiconductor |
Continuous Collector Current | 4 A | 4 A | 4 A |
Pd Power Dissipation | 25 W | 25 W | 25 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 30 | 1 | 30 |
Subcategory | Transistors | Transistors | Transistors |
Part # Aliases | 2N3740 PBFREE | - | - |
Unit Weight | 0.206000 oz | - | - |
Technology | - | Si | Si |
Configuration | - | Single | Single |
Minimum Operating Temperature | - | - 65 C | - 65 C |
DC Current Gain hFE Max | - | 100 at 250 mA, 1 VDC | 200 at 250 mA, 1 V |
DC Collector/Base Gain hfe Min | - | 30 at 250 mA, 1 VDC | 30 at 250 mA, 1 V |