PartNumber | 2N3763 | 2N3763L |
Description | Bipolar Transistors - BJT Small Signal | Bipolar Transistors - BJT Power BJT |
Manufacturer | Central Semiconductor | Microchip |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | N |
Technology | Si | Si |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-39-3 | TO-5-3 |
Transistor Polarity | PNP | PNP |
Configuration | Single | Single |
Collector Base Voltage VCBO | 60 V | 60 V |
Emitter Base Voltage VEBO | 5 V | 5 V |
Gain Bandwidth Product fT | 150 MHz | - |
Series | 2N3763 | - |
DC Current Gain hFE Max | 80 | 80 |
Packaging | Bulk | Foil Bag |
Brand | Central Semiconductor | Microchip / Microsemi |
DC Collector/Base Gain hfe Min | 20 | 20 |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 500 | 1 |
Subcategory | Transistors | Transistors |
Part # Aliases | 2N3763 PBFREE | - |
Unit Weight | 0.035486 oz | - |
Collector Emitter Voltage VCEO Max | - | 60 V |
Collector Emitter Saturation Voltage | - | 0.9 V |
Maximum DC Collector Current | - | 1.5 A |
Minimum Operating Temperature | - | - 55 C |
Maximum Operating Temperature | - | + 200 C |
Continuous Collector Current | - | 1.5 A |
Pd Power Dissipation | - | 0.5 W |