2N3868

2N3868 vs 2N3868S

 
PartNumber2N38682N3868S
DescriptionBipolar Transistors - BJT Power BJTBipolar Transistors - BJT Power BJT
ManufacturerMicrochipMicrochip
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT
RoHSNN
TechnologySi-
Mounting StyleThrough Hole-
Package / CaseTO-5-3-
Transistor PolarityPNP-
ConfigurationSingle-
Collector Emitter Voltage VCEO Max60 V-
Collector Base Voltage VCBO60 V-
Emitter Base Voltage VEBO4 V-
Collector Emitter Saturation Voltage500 mV-
Maximum DC Collector Current3 mA-
Minimum Operating Temperature- 65 C-
Maximum Operating Temperature+ 200 C-
DC Current Gain hFE Max150 at 1.5 A, 2 VDC-
PackagingBulkBulk
BrandMicrochip / MicrosemiMicrochip / Microsemi
DC Collector/Base Gain hfe Min30 at 1.5 A, 2 VDC-
Pd Power Dissipation1 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity11
SubcategoryTransistorsTransistors
Hersteller Teil # Beschreibung RFQ
Microchip / Microsemi
Microchip / Microsemi
2N3868 Bipolar Transistors - BJT Power BJT
2N3868S Bipolar Transistors - BJT Power BJT
2N3868 Trans GP BJT PNP 60V 3A 3-Pin TO-5
2N3868S Trans GP BJT PNP 60V 3A 3-Pin TO-39
2N3868GJTX Neu und Original
2N3868SJAN Trans GP BJT PNP 60V 3A 3-Pin TO-39 Bag - Bag (Alt: JAN2N3868S)
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