PartNumber | 2N3868 | 2N3868S |
Description | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT Power BJT |
Manufacturer | Microchip | Microchip |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | N | N |
Technology | Si | - |
Mounting Style | Through Hole | - |
Package / Case | TO-5-3 | - |
Transistor Polarity | PNP | - |
Configuration | Single | - |
Collector Emitter Voltage VCEO Max | 60 V | - |
Collector Base Voltage VCBO | 60 V | - |
Emitter Base Voltage VEBO | 4 V | - |
Collector Emitter Saturation Voltage | 500 mV | - |
Maximum DC Collector Current | 3 mA | - |
Minimum Operating Temperature | - 65 C | - |
Maximum Operating Temperature | + 200 C | - |
DC Current Gain hFE Max | 150 at 1.5 A, 2 VDC | - |
Packaging | Bulk | Bulk |
Brand | Microchip / Microsemi | Microchip / Microsemi |
DC Collector/Base Gain hfe Min | 30 at 1.5 A, 2 VDC | - |
Pd Power Dissipation | 1 W | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1 | 1 |
Subcategory | Transistors | Transistors |