2N4

2N4424 vs 2N4424 TRE vs 2N4416A TIN/LEAD

 
PartNumber2N44242N4424 TRE2N4416A TIN/LEAD
DescriptionBipolar Transistors - BJT NPN Gen Pur SSBipolar Transistors - BJT NPN 60Vcbo 40Vceo 5.0Vebo 500mA 625mWJFET N-Ch 35Vgd 35Vgs 35Vds 10mA 300mW
ManufacturerCentral SemiconductorCentral SemiconductorCentral Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTJFET
RoHSYYN
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-92-3TO-92-3TO-72-4
Transistor PolarityNPNNPNN-Channel
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max40 V40 V-
Collector Base Voltage VCBO60 V60 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage850 mV0.3 V-
Maximum DC Collector Current500 mA--
Minimum Operating Temperature- 65 C- 65 C- 65 C
Maximum Operating Temperature+ 150 C+ 150 C+ 200 C
Series2N44242N44242N4416A
Height5.33 mm--
Length5.21 mm--
PackagingBulkReel-
Width4.19 mm--
BrandCentral SemiconductorCentral SemiconductorCentral Semiconductor
DC Collector/Base Gain hfe Min180 at 2 mA, 4.5 V180 at 2 mA, 4.5 V-
Pd Power Dissipation625 mW625 mW300 mW
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsJFETs
Factory Pack Quantity250020002000
SubcategoryTransistorsTransistorsTransistors
Part # Aliases2N4424 PBFREE2N4424 PBFREE TRE-
Unit Weight0.016000 oz--
Technology-SiSi
DC Current Gain hFE Max-540 at 5 mA, 4.5 V-
Continuous Collector Current-500 mA-
Vds Drain Source Breakdown Voltage--35 V
Vgs Gate Source Breakdown Voltage--35 V
Drain Source Current at Vgs=0--15 mA
Gate Source Cutoff Voltage--6 V
  • Beginnen mit
  • 2N4 868
Hersteller Teil # Beschreibung RFQ
Central Semiconductor
Central Semiconductor
2N4427 Bipolar Transistors - BJT NPN VHF/UHF AM
2N4424 Bipolar Transistors - BJT NPN Gen Pur SS
2N4424 TRE Bipolar Transistors - BJT NPN 60Vcbo 40Vceo 5.0Vebo 500mA 625mW
2N4416A TIN/LEAD JFET N-Ch 35Vgd 35Vgs 35Vds 10mA 300mW
2N4424 TRE Bipolar Transistors - BJT NPN 60Vcbo 40Vceo 5.0Vebo 500mA 625mW
Microchip / Microsemi
Microchip / Microsemi
2N4449 Bipolar Transistors - BJT Small-Signal BJT
2N4449UB Bipolar Transistors - BJT Small-Signal BJT
2N4449/TR Bipolar Transistors - BJT
2N4449 TRANS NPN 20V TO46
InterFET
InterFET
2N4416A JFET JFET N-Channel -30V 10mA 300mW 2mW
Vishay Semiconductors
Vishay Semiconductors
2N4416A-E3 JFET RECOMMENDED ALT 106-2N4416A
2N4416K Neu und Original
2N4417 Neu und Original
2N4421 Bipolar Junction Transistor, NPN Type, TO-92VAR
2N4424-TRA Neu und Original
2N4427 CS Neu und Original
2N4428 *** FREE SHIPPING ORDERS OVER $100 ***
2N4429 TRANSISTOR,BJT,NPN,35V V(BR)CEO,425MA I(C),TO-117
2N4431 Neu und Original
2N4441 Silicon Controlled Rectifier, 50 Volt, 8A, TO-225AA
2N4443 Silicon Controlled Rectifier, 400 Volt, 8A, TO-225AA
2N4443. Neu und Original
2N448E Neu und Original
2N449E Neu und Original
2N450 Neu und Original
2N4502 Neu und Original
2N452 Neu und Original
2N4531 Neu und Original
2N454 Neu und Original
2N456 Bipolar Junction Transistor, PNP Type, TO-3
2N4576 Neu und Original
2N457A Bipolar Junction Transistor, PNP Type, TO-3
2N458 Neu und Original
2N458 ZN458 Neu und Original
2N4582 Neu und Original
2N4586 Neu und Original
2N4587 Neu und Original
2N4423 Neu und Original
2N4416-LF Neu und Original
2N4424 TRA PBFREE Trans GP BJT NPN 40V 0.5A 625mW
2N4416/MOTOROLA INSTOCK
2N4416A-TO-18 Wideband, High Gain, Single, N- Channel JFET
2N4427A Neu und Original
2N4430 Neu und Original
Central Semiconductor
Central Semiconductor
2N4424 Bipolar Transistors - BJT NPN Gen Pur SS
2N4427 RF Bipolar Transistors Bipolar/LDMOS Transisto
Vishay
Vishay
2N4416A JFET N-Chan JFET
2N4416A-E3 JFET 35V 5mA
2N4416A-2 MOSFET N-CH 35V 5MA TO-206AF
2N4416A SIL ONIX Neu und Original
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