 | |  | |
| PartNumber | 2N4449 | 2N4449UB | 2N4449/TR |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | N | N | N |
| Packaging | Foil Bag | Foil Bag | Reel |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 1 | 100 |
| Subcategory | Transistors | Transistors | Transistors |
| Technology | - | - | Si |
| Mounting Style | - | - | Through Hole |
| Package / Case | - | - | TO-46-3 |
| Transistor Polarity | - | - | NPN |
| Configuration | - | - | Single |
| Collector Emitter Voltage VCEO Max | - | - | 20 V |
| Collector Base Voltage VCBO | - | - | 6 V |
| Emitter Base Voltage VEBO | - | - | 6 V |
| Collector Emitter Saturation Voltage | - | - | 0.45 V |
| Minimum Operating Temperature | - | - | - 65 C |
| Maximum Operating Temperature | - | - | + 200 C |
| DC Current Gain hFE Max | - | - | 120 at 100 mA, 1 V |
| DC Collector/Base Gain hfe Min | - | - | 20 at 100 mA, 1 V |
| Pd Power Dissipation | - | - | 360 mW |
