 | |  | |
| PartNumber | 2N5010 | 2N5011 | 2N5012 |
| Description | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT Power BJT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | N | N | N |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 1 | 100 |
| Subcategory | Transistors | Transistors | Transistors |
| Technology | - | - | Si |
| Mounting Style | - | - | Through Hole |
| Package / Case | - | - | TO-5-3 |
| Transistor Polarity | - | - | NPN |
| Configuration | - | - | Single |
| Collector Emitter Voltage VCEO Max | - | - | 700 V |
| Collector Base Voltage VCBO | - | - | 700 V |
| Emitter Base Voltage VEBO | - | - | 5 V |
| Collector Emitter Saturation Voltage | - | - | 1.6 V |
| Maximum DC Collector Current | - | - | 200 mA |
| Minimum Operating Temperature | - | - | - 65 C |
| Maximum Operating Temperature | - | - | + 200 C |
| DC Current Gain hFE Max | - | - | 180 at 25 mA, 10 V |
| DC Collector/Base Gain hfe Min | - | - | 30 at 25 mA, 10 V |
| Pd Power Dissipation | - | - | 1 W |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Microchip / Microsemi |
2N5010 | Bipolar Transistors - BJT Power BJT | |
| 2N5011 | Bipolar Transistors - BJT Power BJT | ||
| 2N5015 | Bipolar Transistors - BJT Power BJT | ||
| 2N5014 | Bipolar Transistors - BJT Power BJT | ||
| 2N5012 | Bipolar Transistors - BJT Power BJT | ||
| 2N5013 | Bipolar Transistors - BJT Power BJT | ||
| 2N5010 | NPN SILICON TRANSISTOR | ||
| 2N5012 | NPN SILICON TRANSISTOR | ||
| 2N5013 | NPN SILICON TRANSISTOR | ||
| 2N5015 | NPN SILICON TRANSISTOR | ||
| 2N5014GB | Neu und Original | ||
| 2N5017 | Neu und Original | ||
| 2N5019 | *** FREE SHIPPING ORDERS OVER $100 *** JFET Transistor, P-Channel, TO-18 |