2N5401RL

2N5401RLRA vs 2N5401RL1G vs 2N5401RL1

 
PartNumber2N5401RLRA2N5401RL1G2N5401RL1
DescriptionBipolar Transistors - BJT 500mA 160V PNPBipolar Transistors - BJT 500mA 160V PNPTRANS PNP 150V 0.6A TO-92
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSNY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3TO-92-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max150 V150 V-
Collector Base Voltage VCBO160 V160 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage0.5 V0.5 V-
Maximum DC Collector Current0.6 A0.6 A-
Gain Bandwidth Product fT300 MHz300 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Height5.33 mm5.33 mm-
Length5.2 mm5.2 mm-
PackagingReelReel-
Width4.19 mm4.19 mm-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current0.6 A0.6 A-
DC Collector/Base Gain hfe Min5050-
Pd Power Dissipation625 mW625 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity20002000-
SubcategoryTransistorsTransistors-
Hersteller Teil # Beschreibung RFQ
ON Semiconductor
ON Semiconductor
2N5401RLRA Bipolar Transistors - BJT 500mA 160V PNP
2N5401RL1G Bipolar Transistors - BJT 500mA 160V PNP
2N5401RLRM Bipolar Transistors - BJT 500mA 160V PNP
2N5401RLRAG Bipolar Transistors - BJT 500mA 160V PNP
2N5401RLRMG Bipolar Transistors - BJT 500mA 160V PNP
2N5401RL1 TRANS PNP 150V 0.6A TO-92
2N5401RL1G TRANS PNP 150V 0.6A TO-92
2N5401RLRA TRANS PNP 150V 0.6A TO92
2N5401RLRMG TRANS PNP 150V 0.6A TO-92
2N5401RLRAG Bipolar Transistors - BJT 500mA 160V PNP
2N5401RLRM TRANS PNP 150V 0.6A TO-92
2N5401RLRP Neu und Original
2N5401RLRPG Neu und Original
Top