| PartNumber | 2N5550 | 2N5550TAR | 2N5550TA |
| Description | Bipolar Transistors - BJT NPN Gen Pur SS | Bipolar Transistors - BJT NPN Si Transistor Epitaxial | Bipolar Transistors - BJT NPN Si Transistor Epitaxial |
| Manufacturer | Central Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-92-3 | TO-92-3 Kinked Lead | TO-92-3 Kinked Lead |
| Transistor Polarity | NPN | NPN | NPN |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 140 V | 140 V | 140 V |
| Collector Base Voltage VCBO | 160 V | 160 V | 160 V |
| Emitter Base Voltage VEBO | 6 V | 6 V | 6 V |
| Collector Emitter Saturation Voltage | 0.25 V | 0.25 V | 0.25 V |
| Maximum DC Collector Current | 0.6 A | 0.6 A | 0.6 A |
| Gain Bandwidth Product fT | 300 MHz | 300 MHz | 300 MHz |
| Minimum Operating Temperature | - 65 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | 2N5550 | 2N5550 | 2N5550 |
| Height | 5.33 mm | 4.7 mm | 4.7 mm |
| Length | 5.21 mm | 4.7 mm | 4.7 mm |
| Packaging | Bulk | Ammo Pack | Ammo Pack |
| Width | 4.19 mm | 3.93 mm | 3.93 mm |
| Brand | Central Semiconductor | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Continuous Collector Current | 0.6 A | 0.6 A | 0.6 A |
| DC Collector/Base Gain hfe Min | 60 at 1 mA, 5 V, 60 at 10 mA, 5 V, 20 at 50 mA, 5 V | 60 | 60 |
| Pd Power Dissipation | 625 mW | 625 mW | 625 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 2500 | 2000 | 2000 |
| Subcategory | Transistors | Transistors | Transistors |
| Part # Aliases | 2N5550 PBFREE | 2N5550TAR_NL | - |
| Unit Weight | 0.016000 oz | 0.008466 oz | 0.008466 oz |
| DC Current Gain hFE Max | - | 250 | 250 |