2N5886 stock, 2N5886, 2N5886G


PartNumber	2N5886G	2N5886 PBFREE	2N5886
Description	Bipolar Transistors - BJT 25A 80V 200W NPN	Bipolar Transistors - BJT NPN 80Vcbo 80Vceo 5.0Vebo 25A 200W	Bipolar Transistors - BJT Power BJT
Manufacturer	ON Semiconductor	Central Semiconductor	Microchip
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT
RoHS	Y	Y	N
Mounting Style	Through Hole	Through Hole	-
Package / Case	TO-204-2	TO-3-2	-
Transistor Polarity	NPN	NPN	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	80 V	80 V	-
Collector Base Voltage VCBO	80 V	80 V	-
Emitter Base Voltage VEBO	5 V	5 V	-
Collector Emitter Saturation Voltage	1 V	4 V	-
Maximum DC Collector Current	25 A	-	-
Gain Bandwidth Product fT	4 MHz	4 MHz	-
Minimum Operating Temperature	- 65 C	- 65 C	-
Maximum Operating Temperature	+ 150 C	+ 200 C	-
Series	2N5886	2N58	-
Height	8.51 mm	-	-
Length	39.37 mm	-	-
Packaging	Tray	Tube	Tray
Width	26.67 mm	-	-
Brand	ON Semiconductor	Central Semiconductor	Microchip / Microsemi
Continuous Collector Current	25 A	25 A	-
DC Collector/Base Gain hfe Min	20	20 at 10 A, 4 V	-
Pd Power Dissipation	200 W	200 W	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors
Factory Pack Quantity	100	20	1
Subcategory	Transistors	Transistors	Transistors
Unit Weight	0.424028 oz	-	-
Technology	-	Si	-
DC Current Gain hFE Max	-	100 at 10 A, 4 V	-

Search Part Number : "2N5886", Match & Start with "2N5886" - Total : 6

Hersteller	Teil #	Beschreibung
	2N5886G	Bipolar Transistors - BJT 25A 80V 200W NPN
	2N5886G.	BIP T03 NPN 25A 80V ROHS COMPLIANT: YES
Central Semiconductor	2N5886 PBFREE	Bipolar Transistors - BJT NPN 80Vcbo 80Vceo 5.0Vebo 25A 200W
Microchip / Microsemi	2N5886	Bipolar Transistors - BJT Power BJT
Microchip / Microsemi	2N5886	PNP POWER TRANSISTOR SILICON AMP
ON Semiconductor	2N5886G	TRANS NPN 80V 25A TO3

2N5886