2N6111

2N6111G vs 2N6111 vs 2N6111.

 
PartNumber2N6111G2N61112N6111.
DescriptionBipolar Transistors - BJT 7A 30V 40W PNPTRANS PNP 30V 7A TO220ABTrans GP BJT PNP 30V 7A 3-Pin(3+Tab) TO-220AB Tube
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max30 V--
Collector Base Voltage VCBO40 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage3.5 V--
Maximum DC Collector Current7 A--
Gain Bandwidth Product fT10 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Series2N6111--
Height15.75 mm--
Length10.53 mm--
PackagingTube--
Width4.83 mm--
BrandON Semiconductor--
Continuous Collector Current7 A--
DC Collector/Base Gain hfe Min30--
Pd Power Dissipation40 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity50--
SubcategoryTransistors--
Unit Weight0.211644 oz--
Hersteller Teil # Beschreibung RFQ
2N6111G Bipolar Transistors - BJT 7A 30V 40W PNP
2N6111. Trans GP BJT PNP 30V 7A 3-Pin(3+Tab) TO-220AB Tube
2N6111G. Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:-30V, Transition Frequency ft:10MHz, Power Dissipation Pd:40W, DC Collector Current:-7A, DC Current Gain hFE:30hFE, No. of Pins:3Pins,
STMicroelectronics
STMicroelectronics
2N6111 TRANS PNP 30V 7A TO220AB
ON Semiconductor
ON Semiconductor
2N6111G Bipolar Transistors - BJT 7A 30V 40W PNP
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