2N660

2N660 vs 2N6600 vs 2N6602

 
PartNumber2N6602N66002N6602
Description
ManufacturerON--
Product CategoryTransistors (BJT) - Single--
Series---
PackagingTray--
Part StatusObsolete--
Transistor TypePNP--
Current Collector (Ic) (Max)16A--
Voltage Collector Emitter Breakdown (Max)140V--
Vce Saturation (Max) @ Ib, Ic4V @ 3.2A, 16A--
Current Collector Cutoff (Max)10mA--
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 8A, 4V--
Power Max150W--
Frequency Transition---
Operating Temperature-65°C ~ 200°C (TJ)--
Mounting TypeThrough Hole--
Package / CaseTO-204AA, TO-3--
Supplier Device PackageTO-204--
Base Part Number2N6609--
Hersteller Teil # Beschreibung RFQ
Central Semiconductor
Central Semiconductor
2N6609 Bipolar Transistors - BJT 160Vcbo 140Vceo 160Vceb 7.0Vebo 16A
2N660 Neu und Original
2N6600 Neu und Original
2N6602 Neu und Original
2N6605A Neu und Original
2N6609A Neu und Original
2N6609G Neu und Original
2N6609G. Neu und Original
Central Semiconductor
Central Semiconductor
2N6609 TRANS PNP 140V 16A TO-204
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