PartNumber | 2N6661 | 2N6661JAN02 | 2N6661-2 |
Description | MOSFET 90V 4Ohm | MOSFET 19500/547 JAN2N6661 | MOSFET 90V 0.86A 6.25W |
Manufacturer | Microchip | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | N | N |
Technology | Si | Si | Si |
Mounting Style | Through Hole | - | Through Hole |
Package / Case | TO-39-3 | - | TO-39-3 |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 10 V | - | - |
Id Continuous Drain Current | 350 mA | - | - |
Rds On Drain Source Resistance | 4 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 800 mV | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 6.25 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Bulk | - | Bulk |
Transistor Type | 1 N-Channel | - | - |
Type | FET | - | - |
Brand | Microchip Technology | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 170 mS | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 500 | 20 | 1 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 10 ns | - | - |
Typical Turn On Delay Time | 10 ns | - | - |
Unit Weight | 0.039133 oz | - | - |
Height | - | - | 4.57 mm |
Length | - | - | 8.51 mm |
Width | - | - | 8.51 mm |