PartNumber | 2N7000BU | 2N7000B | 2N7000BU/2N7000TA |
Description | MOSFET 60V N-Channel Sm Sig | ||
Manufacturer | ON Semiconductor | Fairchild Semiconductor | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-92-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 60 V | - | - |
Id Continuous Drain Current | 200 mA | - | - |
Rds On Drain Source Resistance | 1.2 Ohms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 400 mW | - | - |
Configuration | Single | Single | - |
Packaging | Bulk | Bulk | - |
Height | 5.33 mm | - | - |
Length | 5.2 mm | - | - |
Product | MOSFET Small Signal | - | - |
Series | 2N7000 | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Type | MOSFET | - | - |
Width | 4.19 mm | - | - |
Brand | ON Semiconductor | - | - |
Forward Transconductance Min | 0.1 S | - | - |
Fall Time | 10 ns | 10 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 10 ns | 10 ns | - |
Factory Pack Quantity | 10000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 10 ns | 10 ns | - |
Typical Turn On Delay Time | 10 ns | 10 ns | - |
Part # Aliases | 2N7000BU_NL | - | - |
Unit Weight | 0.006314 oz | 0.006314 oz | - |
Part Aliases | - | 2N7000BU_NL | - |
Package Case | - | TO-226-3, TO-92-3 (TO-226AA) | - |
Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
Mounting Type | - | Through Hole | - |
Supplier Device Package | - | TO-92-3 | - |
FET Type | - | MOSFET N-Channel, Metal Oxide | - |
Power Max | - | 400mW | - |
Drain to Source Voltage Vdss | - | 60V | - |
Input Capacitance Ciss Vds | - | 50pF @ 25V | - |
FET Feature | - | Standard | - |
Current Continuous Drain Id 25°C | - | 200mA (Tc) | - |
Rds On Max Id Vgs | - | 5 Ohm @ 500mA, 10V | - |
Vgs th Max Id | - | 3V @ 1mA | - |
Gate Charge Qg Vgs | - | - | - |
Pd Power Dissipation | - | 400 mW | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 200 mA | - |
Vds Drain Source Breakdown Voltage | - | 60 V | - |
Rds On Drain Source Resistance | - | 1.2 Ohms | - |
Forward Transconductance Min | - | 0.1 S | - |