2SA1179

2SA1179N6-CPA-TB-E vs 2SA1179N6-TB-E

 
PartNumber2SA1179N6-CPA-TB-E2SA1179N6-TB-E
DescriptionBipolar Transistors - Pre-Biased BIP PNP 0.15A 50VBipolar Transistors - BJT BIP PNP 0.15A 50V
ManufacturerON SemiconductorON Semiconductor
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - BJT
RoHSYY
Transistor PolarityNPN, PNPPNP
Mounting StyleSMD/SMTSMD/SMT
DC Collector/Base Gain hfe Min200-
Collector Emitter Voltage VCEO Max50 V- 50 V
Continuous Collector Current150 mA- 150 mA
Pd Power Dissipation200 mW200 mW
PackagingReelReel
BrandON SemiconductorON Semiconductor
Number of Channels2 Channel-
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors
Factory Pack Quantity30003000
SubcategoryTransistorsTransistors
Package / Case-SC-59-3
Configuration-Single
Collector Base Voltage VCBO-- 55 V
Emitter Base Voltage VEBO-- 5 V
Collector Emitter Saturation Voltage-- 0.15 V
Maximum DC Collector Current-- 300 mA
Gain Bandwidth Product fT-180 MHz
Minimum Operating Temperature-- 55 C
Maximum Operating Temperature-+ 150 C
Series-2SA1179N
DC Current Gain hFE Max-600
Unit Weight-0.000282 oz
Hersteller Teil # Beschreibung RFQ
ON Semiconductor
ON Semiconductor
2SA1179N6-CPA-TB-E Bipolar Transistors - Pre-Biased BIP PNP 0.15A 50V
2SA1179N6-TB-E Bipolar Transistors - BJT BIP PNP 0.15A 50V
2SA1179N6-CPA-TB-E TRANS PNP 50V 0.15A CP
2SA1179N6-TB-E Bipolar Transistors - BJT BIP PNP 0.15A 50V
2SA1179 Neu und Original
2SA1179N6-CPA-TB Neu und Original
2SA1179RM6-TB Neu und Original
2SA1179-5-TB-E Neu und Original
2SA1179-M6-TA Neu und Original
2SA1179M5 Neu und Original
2SA1179M5-TA Neu und Original
2SA1179M5-TB 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1179M6-TA Neu und Original
2SA1179M6-TB Neu und Original
2SA1179N6 Neu und Original
2SA1179-5-TB-E , QS5U17- Neu und Original
2SA1179-M4 Neu und Original
2SA1179M6-TB , MAX6315US Neu und Original
2SA1179M6-TB,TK11230BUCB Neu und Original
2SA1179M7-TB Neu und Original
2SA1179-6-TB-E - Bulk (Alt: 2SA1179-6-TB-E)
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