PartNumber | 2SA1179N6-CPA-TB-E | 2SA1179N6-TB-E |
Description | Bipolar Transistors - Pre-Biased BIP PNP 0.15A 50V | Bipolar Transistors - BJT BIP PNP 0.15A 50V |
Manufacturer | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - BJT |
RoHS | Y | Y |
Transistor Polarity | NPN, PNP | PNP |
Mounting Style | SMD/SMT | SMD/SMT |
DC Collector/Base Gain hfe Min | 200 | - |
Collector Emitter Voltage VCEO Max | 50 V | - 50 V |
Continuous Collector Current | 150 mA | - 150 mA |
Pd Power Dissipation | 200 mW | 200 mW |
Packaging | Reel | Reel |
Brand | ON Semiconductor | ON Semiconductor |
Number of Channels | 2 Channel | - |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors |
Factory Pack Quantity | 3000 | 3000 |
Subcategory | Transistors | Transistors |
Package / Case | - | SC-59-3 |
Configuration | - | Single |
Collector Base Voltage VCBO | - | - 55 V |
Emitter Base Voltage VEBO | - | - 5 V |
Collector Emitter Saturation Voltage | - | - 0.15 V |
Maximum DC Collector Current | - | - 300 mA |
Gain Bandwidth Product fT | - | 180 MHz |
Minimum Operating Temperature | - | - 55 C |
Maximum Operating Temperature | - | + 150 C |
Series | - | 2SA1179N |
DC Current Gain hFE Max | - | 600 |
Unit Weight | - | 0.000282 oz |