PartNumber | 2SA1941-O(Q) | 2SA1941-O | 2SA1941-O(Q,T) |
Description | Bipolar Transistors - BJT PNP VCEO -140V 70-W DC -10A 100W | Bipolar Transistors - BJT PNP VCEO -140V 70-W DC -10A 100W | |
Manufacturer | Toshiba | TOSHIBA | - |
Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Transistor Polarity | PNP | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | - 140 V | - | - |
Collector Base Voltage VCBO | - 140 V | - | - |
Emitter Base Voltage VEBO | - 5 V | - | - |
Collector Emitter Saturation Voltage | 2 V | - | - |
Gain Bandwidth Product fT | 30 MHz | - | - |
Maximum Operating Temperature | + 150 C | - | - |
DC Current Gain hFE Max | 83 | - | - |
Brand | Toshiba | - | - |
Continuous Collector Current | 10 A | - | - |
DC Collector/Base Gain hfe Min | 35 | - | - |
Pd Power Dissipation | 100 W | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 4000 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.165788 oz | - | - |