 |  | | |
| PartNumber | 2SA2016-TD-E | 2SA2016G | 2SA2016L SOT89 |
| Description | Bipolar Transistors - BJT BIP PNP 7A 50V | ||
| Manufacturer | ON Semiconductor | UTC | - |
| Product Category | Bipolar Transistors - BJT | IC Chips | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-89-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Collector Base Voltage VCBO | 100 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 240 mV | - | - |
| Maximum DC Collector Current | 7 A | - | - |
| Gain Bandwidth Product fT | 330 MHz | - | - |
| Series | 2SA2016 | - | - |
| Packaging | Reel | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 7 A | - | - |
| DC Collector/Base Gain hfe Min | 200 | - | - |
| Pd Power Dissipation | 3.5 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.004603 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| 2SA2016-TD-E | Bipolar Transistors - BJT BIP PNP 7A 50V | ||
| 2SA2016G | Neu und Original | ||
| 2SA2016L SOT89 | Neu und Original | ||
ON Semiconductor |
2SA2016-TD-E | Bipolar Transistors - BJT BIP PNP 7A 50V |