PartNumber | 2SAR522EBTL | 2SAR522EB TL | 2SAR522M |
Description | Bipolar Transistors - BJT PNP General Purpose Amplification Transistor | ||
Manufacturer | ROHM Semiconductor | - | Rohm Semiconductor |
Product Category | Bipolar Transistors - BJT | - | Transistors (BJT) - Single, Pre-Biased |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | SOT-416FL-3 | - | - |
Transistor Polarity | PNP | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | - 20 V | - | - |
Collector Base Voltage VCBO | - 20 V | - | - |
Emitter Base Voltage VEBO | - 5 V | - | - |
Collector Emitter Saturation Voltage | - 120 mV | - | - |
Maximum DC Collector Current | - 200 mA | - | - |
Gain Bandwidth Product fT | 350 MHz | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | 2SAR522EB | - | 2SAR522M |
DC Current Gain hFE Max | 560 | - | - |
Packaging | Reel | - | Digi-ReelR Alternate Packaging |
Brand | ROHM Semiconductor | - | - |
Continuous Collector Current | - 200 mA | - | - |
DC Collector/Base Gain hfe Min | 120 | - | - |
Pd Power Dissipation | 150 mW | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | Transistors | - | - |
Part # Aliases | 2SAR522EB | - | - |
Unit Weight | 0.000212 oz | - | - |
Package Case | - | - | SOT-723 |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | VMT3 |
Power Max | - | - | 150mW |
Transistor Type | - | - | PNP |
Current Collector Ic Max | - | - | 200mA |
Voltage Collector Emitter Breakdown Max | - | - | 20V |
DC Current Gain hFE Min Ic Vce | - | - | 120 @ 1mA, 2V |
Vce Saturation Max Ib Ic | - | - | 300mV @ 10mA, 100mA |
Current Collector Cutoff Max | - | - | 100nA (ICBO) |
Frequency Transition | - | - | 350MHz |