2SB1121T-T

2SB1121T-TD-E vs 2SB1121T-TD-E , MBRS230L vs 2SB1121T-TD

 
PartNumber2SB1121T-TD-E2SB1121T-TD-E , MBRS230L2SB1121T-TD
DescriptionBipolar Transistors - BJT BIP PNP 2A 25V
ManufacturerON Semiconductor-SANYO
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Single
RoHSY--
Mounting StyleSMD/SMT--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 25 V--
Collector Base Voltage VCBO- 30 V--
Emitter Base Voltage VEBO- 6 V--
Collector Emitter Saturation Voltage- 0.35 V--
Maximum DC Collector Current- 5 A--
Gain Bandwidth Product fT150 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Series2SB1121--
DC Current Gain hFE Max560--
PackagingReel--
BrandON Semiconductor--
Continuous Collector Current- 2 A--
Pd Power Dissipation1.3 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.001816 oz--
Hersteller Teil # Beschreibung RFQ
2SB1121T-TD-E Bipolar Transistors - BJT BIP PNP 2A 25V
2SB1121T-TD-E , MBRS230L Neu und Original
2SB1121T-TD Neu und Original
ON Semiconductor
ON Semiconductor
2SB1121T-TD-E Bipolar Transistors - BJT BIP PNP 2A 25V
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